Силовой модуль IGBT SEMIX653GB176HDS

IGBT MODULE, 2X1700V
Transistor Type IGBT Module
Transistor Polarity N Channel
Voltage, Vces 1700V
Current Ic Continuous a Max 650A
Voltage, Vce Sat Max 2.45V
Case Style SEMiX 3s
Termination Type Screw
Collector-to-Emitter Breakdown Voltage 1.2V
Current Ic av 650A
Current, Icm Pulsed 900A
Current, Ifs Max 2900A
Time, Rise 90ns
Voltage, Vrrm 1700V